Two-dimensional quantum light emitting device

Description (excerpt)

CROSS-REFERENCE TO RELATED APPLICATION This application is a divisional patent application of prior U.S. application Ser. No. 18/063,751, filed 9 Dec. 2022, titled “Two-Dimensional Quantum Light Emitting Device” (Navy Case #113895), which application is hereby incorporated by reference herein in its entirety for its teachings, and referred to hereafter as “the parent application.” FEDERALLY-SPONSORED RESEARCH AND DEVELOPMENT The invention described herein may be manufactured and used by or for the government of the United States of America for governmental purposes without the payment of any royalties thereon or therefor. Licensing and technical inquiries may be directed to the Office of Research and Technical Applications, Naval Information Warfare Center Pacific, Code 72120, San Diego, CA, 92152; (619) 553-5118; ssc_pac_t2@navy.mil. Reference Navy Case Number 113895US02. BACKGROUND OF THE INVENTION Quantum light sources have broad applicability to multiple existing and emerging technologies including computing, microscopy, networking and data communication. Scalable low cost solid state emitters that can address all areas of the visible and infrared bands are desired. However, production of bright quantum light sources occupy the blue green portion of the visible spectrum is challenging due to the high photon energies needed to perform either direct emission or frequency conversion to produce quantum light emission. 2d semiconductor materials are attractive due to their simple fabrication and low size weight and power requirements as well as their tunable band gap energies. However, existing monolayer 2-D semiconductors have band gap energies that limit emission to wavelengths longer than 600 nm, making the blue and green portions of the band inaccessible. BRIEF DESCRIPTION OF THE DRAWINGS Features and advantages of examples of the present disclosure will be apparent by reference to the following detailed description and drawings, in which like reference numerals correspond to similar, but in some instances, not identical, components. Reference numerals or features having a previously described function may or may not be described in connection with other drawings in which they appear. FIG. 1 is a cross-sectional view of an example of the two-dimensional quantum light emitting device disclosed herein. FIG. 2 is a top view of an example of the two-dimensional quantum light emitting device disclosed herein with a magnified active region, which includes a Moire periodic potential manifested by the relative twist angle imparted by the 2D material of the top monolayer with respect to the 2D material of the bottom monolayer underneath the top monolayer. FIG. 3 is a cross-sectional view of an example of the two-dimensional quantum light emitting device with encapsulation layers above and below the top and bottom monolayers. FIG. 4 is a cross-sectional view of an example of the two-dimensional quantum light emitting device with an encapsulation layer (e.g. representative of an ionic liquid or ion-gel) above the two or more monolayers and a transparent top-gate electrode residing above the active region of the two or more monolayers. DETAILED DESCRIPTION OF EMBODIMENTS A two-dimensional quantum light emitting device is described herein that includes a substrate, two or more monolayers, and one or more positive electrodes and one or more negative electrodes. The substrate can grow two or more monolayers on a surface of the substrate. The two or more monolayers have a tunable bandgap ranging from about 477 nm to about 620 nm and have a tunable twist angle. The one or more positive electrodes and the one or more negative electrodes provide a current to an active region of the two or more monolayers and are interdigitated electrodes, non-interdigitated electrodes, piezoelectric electrodes, or a combination thereof that tune the twist angle of the two or more monolayers in-situ. Referring now to FIG. 1 , a cross-sectional view of an example of the two-dimensional quantum light emitting device 100 is shown. The hatching pattern in FIG. 1 is for illustrative purposes only to aid in viewing and should not be construed as being limiting or directed to a particular material or materials. The quantum light emitting device 100 includes a substrate 102 that grows two or more